#GERMANIUM TRANSISTOR FULL#

We are advancing on the state of the art and showing the potential of germanium tin as a channel material.”

“The collaboration demonstrated the potential of low-bandgap GeSn for advanced transistors with interesting electrical properties, such as high carrier mobilities in the channel, low operating voltages and a smaller footprint,” says Hartmann, a co-author of the paper. CEA-Leti claims to be one of the few RTOs (research and technology organizations) globally that is able to deposit such complex in-situ-doped Ge/GeSn stacks. By changing the material, CEA-Leti duplicated its diamond crystalline structure in the layers it grew on top.Įpitaxy is performed at low temperature in a chemical vapor deposition (CVD) reactor, notes Jean-Michel Hartmann, a CEA Fellow, leader of the working group on IV epitaxy at CEA-Leti, and scientific director of the SSURF department.Įpitaxial layer deposition of this kind of stack is a complex step in a process flow requiring patterned cylinders and conformal gate stack deposition. Epitaxy is carried out on a very ordered template, a silicon substrate, with a very precise crystal structure. That project research included contributions from several organizations in addition to CEA-Leti, which delivered the epitaxial stacks. “In addition to their unprecedented electro-optical properties, a major advantage of GeSn binaries is also that they can be grown in the same epitaxy reactors as Si and SiGe alloys, enabling an all-group IV optoelectronic semiconductor platform that can be monolithically integrated on silicon,” the paper adds. In fact, a recent report has shown that the use of Ge 0.92Sn 0.08 as source on top of Ge nanowires (NWs) enhances the p-MOSFET performances.” The paper ‘ Vertical GeSn Nanowire MOSFETs for CMOS Beyond Silicon’ (Mingshan Liu et al, Nature Communications Engineering volume 2, article number 7 (2023)) notes that “GeSn alloys offer a tunable energy bandgap by varying the Sn content and adjustable band off-sets in epitaxial heterostructures with Ge and SiGe. Because germanium and tin both come from the same group of the periodic table as silicon, these transistors could be integrated directly into conventional silicon chips with existing production lines.

GeSn is otherwise compatible with existing CMOS chip fabrication processes. Germanium–tin transistors have an electron mobility that is 2.5 times higher than a comparable transistor made of pure germanium. This proof-of-concept means that vertical transistors made of germanium tin are promising candidates for future low-power, high-performance chips and possibly quantum computers. Micro/nanotechnology R&D center CEA-Leti of Grenoble, France has demonstrated that electrons and other charge carriers can move faster in germanium tin than in silicon or germanium, enabling lower operation voltages and smaller footprints in vertical devices than in planar devices.

#GERMANIUM TRANSISTOR FULL#

and have been kept in storage for some time, they are however pristine, stored with us still in their original packaging and ‘as new’ in all respects, the photographs are representative of their excellent condition, and, as with all our products they come with a full guarantee.5 June 2023 CEA-Leti proof of concept demonstrates higher electrons mobility in germanium tin than in silicon or germanium These parts came to us as part of a lot of surplus stock from a ‘Milspec’ type manufacturing Co.

Operating Junction Temperature (Tj): 80 ☌įorward Current Transfer Ratio (hFE), MIN: 100 Maximum Collector Current |Ic max|: 0.05 A Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Collector-Base Voltage |Vcb|: 15 V Maximum Collector Power Dissipation (Pc): 0.08 W PNP germanium junction transistor for switch applications, also usable for AM broadcast mixer/oscillator replacements.

Germanium transistor